Fabrication of Wire Bond-Less SiC Power Module with Sandwich Structure for High Temperature Device Operation
نویسندگان
چکیده
منابع مشابه
A study on electro thermal response of SiC power module during high temperature operation
This paper focuses on using high temperature operating capability of SiC power devices, which are packaged in power modules. A SiC Schottky barrier diode is mounted on an active metal brazed Si3N4 substrate as a heat resistive power module. The temperature dependency of electrical characteristics of the SiC device and thermal dynamics of the power module are modeled for numerical electro therma...
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ژورنال
عنوان ژورنال: Journal of The Japan Institute of Electronics Packaging
سال: 2013
ISSN: 1343-9677,1884-121X
DOI: 10.5104/jiep.16.300